We find that the photo-induced excess conductivity (persistent photoconductivity, PPC) in doping-modulated hydrogenated amorphous silicon (a-Si: H) is thermally activated for exposure temperatures above 220 K in agreement with Kakalios and with Hundhausen and Ley. However, we find a temperature regime between 80 and 220 Kin which the PPC measured at 300 K is independent of excitation temperature. Whether the PPC is excited in the thermally activated regime above 220 K or in the temperature-independent regime, the annealing occurs at 410 K. The pre-exponential factor and the activation energy of PPC are related by the Meyer-Neldel rule independent of the excitation temperature.