Diffusion‐Induced Dislocations in Silicon
作者:
J. Washburn,
G. Thomas,
H. J. Queisser,
期刊:
Journal of Applied Physics
(AIP Available online 1964)
卷期:
Volume 35,
issue 6
页码: 1909-1914
ISSN:0021-8979
年代: 1964
DOI:10.1063/1.1713768
出版商: AIP
数据来源: AIP
摘要:
Plastic deformation produced by phosphorus diffusion into a (001) silicon surface has been studied by transmission electron microscopy. The lattice parameter differences in regions of steep solute concentration gradient are accommodated by a crossed grid of edge dislocations having Burgers vectora/2[110] anda/2[1¯10]. The long edge dislocations end at nodes, which suggests that they are formed by dislocation reactions between pairs of dislocations that can glide into the crystal on {111} planes.
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