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Study of &Ggr;,L, andXdonor states in Si‐doped AlGaAs by pressure dependent Hall measurements

 

作者: B. Goutiers,   L. Dmowski,   E. Ranz,   J. C. Portal,   N. Chand,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 14  

页码: 1740-1742

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106236

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using variable pressure for tuning the band structure and variable infrared light pulse intensity for tuning the number of Si‐related shallow donor metastable states, we have demonstrated that these states are effective mass‐like states linked to each of the conduction band &Ggr;,L, andXminimum. The evolution of their binding energies with their increasing density is shown to decrease and the Mott transition for the &Ggr;‐like states has been also observed.

 

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