Study of &Ggr;,L, andXdonor states in Si‐doped AlGaAs by pressure dependent Hall measurements
作者:
B. Goutiers,
L. Dmowski,
E. Ranz,
J. C. Portal,
N. Chand,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 14
页码: 1740-1742
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106236
出版商: AIP
数据来源: AIP
摘要:
Using variable pressure for tuning the band structure and variable infrared light pulse intensity for tuning the number of Si‐related shallow donor metastable states, we have demonstrated that these states are effective mass‐like states linked to each of the conduction band &Ggr;,L, andXminimum. The evolution of their binding energies with their increasing density is shown to decrease and the Mott transition for the &Ggr;‐like states has been also observed.
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