A new method to detect deep centers close to the interface in metal‐semiconductor contacts is reported. The presence of humps in the logIF‐VFcharacteristics attributed to resonant tunneling contributions to the total forward current is investigated via the slope changes in the logIF‐VFplots. Although the relation between the voltageVFmat which the minimum ofd2 logIF/dV2Foccurs, and the energy position of the levels causing the resonant tunneling current is not easy to calculate, this new method represents a powerful means to detect traps lying near the interface.