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Reply to ’’Comment on ’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band‐structure dependent transport and impact ionization in GaAs’ ’’

 

作者: K. Hess,   J. Y. Tang,   K. Brennan,   H. Shichijo,   G. E. Stillman,  

 

期刊: Journal of Applied Physics  （AIP Available online 1982）
卷期: Volume 53, issue 4  

页码: 3327-3329

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.330994

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using semiclassical Monte Carlo simulations and the band structure as calculated by the empirical pseudopotential method, we show that the electron‐phonon scattering rate in GaAs exceeds 1014s−1. As a consequence, impact ionization of ballistic (lucky) electrons becomes extremely unlikely. The objections of Capassoetal. to our treatment are discussed in detail and shown to be physically of minor importance.

 

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