Raman spectra of Si‐implanted GaSb
作者:
Y. K. Su,
K. J. Gan,
J. S. Hwang,
S. L. Tyan,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 11
页码: 5584-5587
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346994
出版商: AIP
数据来源: AIP
摘要:
The variations of Raman spectra for Si‐implanted (100) GaSb with various doses and energies were investigated. Samples implanted at room temperature showed disorder or amorphous layer. In order to heal the damage layer, furnace annealing as well as rapid thermal annealing were used. We got a better structural recovery with increasing the annealing temperature or time, and rapid thermal annealing showed better results in comparison with conventional furnace annealing. The relative intensities of longitudinal optical phonons from Raman spectra by rapid thermal annealing samples were compared with those of unimplanted GaSb. It is found that a better recovery of damage layer is formed comparable to an unimplanted wafer when the annealing temperature is 600 °C for 30 s.
点击下载:
PDF
(308KB)
返 回