Radiotracer and secondary‐ion mass spectrometry (SIMS) diffusion profiling techniques in CdxHg1−xTe (CMT) have been compared in order to provide a sounder basis for dopant characterization in this material. Au diffusion profiles were determined by the radiotracer and SIMS techniques after a diffusion anneal of 168 h at 225 °C in a flowing Ar ambient. The profiles obtained using the two different techniques were very similar, indicating the same Au diffusion behavior. It was shown that the radiotracer technique can be used for SIMS calibration of Au in CMT. It was also demonstrated that the two techniques give equally valid diffusion profiles.