Stoichiometry and atomic defects in rf‐sputtered SiO2
作者:
T. W. Hickmott,
J. E. Baglin,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 1
页码: 317-323
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.325662
出版商: AIP
数据来源: AIP
摘要:
Electron microprobe and helium ion backscattering are used to measure the stoichiometry of rf‐sputtered SiO2films at a precision of ?1%. Both oxygen‐excess and oxygen‐deficient films occur. Optical absorption and electron spin resonance characterize atomic defects in the films. The correlation between stoichiometry and atomic defects is poor. The reproducibility of composition and of atomic defects from run to run, when sputtering conditions are held constant, is good.
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