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Hall effect in reactively sputtered Cu2S

 

作者: John Y. Leong,   Jick H. Yee,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 35, issue 8  

页码: 601-602

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91222

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The Hall effect in thin films of reactively sputtered Cu2S was measured at temperatures from 90 to 300 °K. The hole concentration ranged from 1018to 2×1019cm−3. The hole mobility ranged from 5.5 to 9 cm2/V s. The predominant scattering mechanisms are ionized impurity scattering atT<100 °K and optical phonon scattering atT≳100 °K.

 

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