AbstractA cross‐sectional sample preparation technique is described that relies on lithographic and dry‐etching processing, thus avoiding metallographic polishing and ion milling. The method is capable of producing cross‐sectional transmission electron microscopy samples with a large amount of transparent area (1 μm × 2.5 mm) which allows the examination of many patterned test sites on the same sample from the same chip of a silicon wafer. An example of the application of the technique is given for localized oxidation through