An oligosilane bridge model for the origin of the intense visible photoluminescence of porous silicon
作者:
Yasuhiko Takeda,
Shi‐aki Hyodo,
Noritomo Suzuki,
Tomoyoshi Motohiro,
Tatsumi Hioki,
Shoji Noda,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 4
页码: 1924-1928
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353182
出版商: AIP
数据来源: AIP
摘要:
Oligosilanes bridging microgaps between silicon microcrystallites were investigated as a possible model for the origin of the intense visible photoluminescence of porous silicon by means of the semiempirical molecular‐orbital method. The incomplete structural relaxation of the oligosilane bridge after the photoexcitation was found to be a key factor to give the visible photoluminescence. The calculated structure‐insensitive photoexcitation energy around 3.3 eV and the structure‐sensitive light emission energy around 1.2–2.1 eV are consistent with the experimental evidence. The sufficient transition probabilities between the concerning electronic states support the high efficiency of photoluminescence. Durabiliy of the structure under the photoexcitation was also suggested. The model is valid even if the silicon microcrystallites are partly or thoroughly replaced by silicon oxides particles as is more realistic for the porous silicon exposed to the air.
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