Fabrication of metallic point contacts: A new approach for devices with a multilayer or a heterointerface
作者:
N. N. Gribov,
S. J. C. H. Theeuwen,
J. Caro,
E. van der Drift,
F. D. Tichelaar,
T. R. de Kruijff,
B. J. Hickey,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 6
页码: 3943-3947
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590442
出版商: American Vacuum Society
数据来源: AIP
摘要:
Thin silicon membranes on silicon on insulator substrates are used to fabricate point contacts with a well-defined interface in the nanoconstriction between the two metal electrodes. Transmission electron microscope images of heterointerfaces in conjunction with energy dispersive x-ray analysis of the interfacial region show the capabilities of the process and its limitations. The latter involve material-specific phenomena on a nanoscale, such as an interfacial reaction between a metal film andSiO2and metal diffusion across the heterointerface. These adverse effects can be avoided by a proper choice of the metals and the deposition temperature, as demonstrated with results of electrical measurements on a Au/Cu heterocontact.
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