Quantitative high resolution electron microscopy of III‐V compounds: A fuzzy logic approach
作者:
R. Hillebrand,
H. Hofmeister,
P. Werner,
U. Go¨sele,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 12
页码: 1763-1765
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114375
出版商: AIP
数据来源: AIP
摘要:
In the study of interdiffusion phenomena in layered structures of III‐V compounds by high resolution electron microscopy, contrast features in the micrographs can be correlated with the variation of the chemical composition of the crystals. For quantitative interpretation of the micrographs a fuzzy logic approach is adapted to extract chemical information. The linguistic variable ‘‘similarity of images’’ is derived from the standard deviation (SD) of their difference patterns, which proved to be an appropriate measure. The approach developed is used to analyze simulated contrast tableaus of GaAs/P (As/P variation) and experimental micrographs of Al/GaAs (Al/Ga variation). ©1995 American Institute of Physics.
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