Inductively coupled plasma sources are being developed to address the need for high plasma density (1011–1012cm−3), low pressure (a few to 10–20 mTorr) etching of semiconductor materials. One such device uses a flat spiral coil of rectangular cross section to generate radio‐frequency (rf) electric fields in a cylindrical plasma chamber, and capacitive rf biasing on the substrate to independently control ion energies incident on the wafer. To investigate these devices we have developed a two‐dimensional hybrid model consisting of electromagnetic, electron Monte Carlo, and hydrodynamic modules; and an off line plasma chemistry Monte Carlo simulation. The results from the model for plasma densities, plasma potentials, and ion fluxes for Ar, O2, Ar/CF4/O2gas mixtures will be presented.