Nuclear microprobe analysis of Hg1−xCdxTe metal–semiconductor–metal detectors on substrates of GaAs and GaAs/Si
作者:
Patrick W. Leech,
Lachlan A. Witham,
Sean P. Dooley,
David N. Jamieson,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1995)
卷期:
Volume 13,
issue 1
页码: 21-25
ISSN:0734-2101
年代: 1995
DOI:10.1116/1.579437
出版商: American Vacuum Society
关键词: RADIATION DETECTORS;INFRARED RADIATION;ION MICROPROBE ANALYSIS;HELIUM IONS;MEV RANGE 01−10;MSM JUNCTIONS;GALLIUM ARSENIDES;SILICON;TERNARY COMPOUNDS;MERCURY TELLURIDES;CADMIUM TELLURIDES;ION CHANNELING;GaAs;Si;(Hg,Cd)Te
数据来源: AIP
摘要:
The ability of the nuclear microprobe with a 2 μm focused beam of MeV He+ions to analyze the active region of individual Hg1−xCdxTe metal–semiconductor–metal (MSM) detectors has been demonstrated. Details of the channeling of Hg1−xCdxTe by Rutherford backscattering spectrometry and the incidence of defects imaged by channeling contrast microscopy were correlated with the performance of devices in a number of arrays. A series of linear growth defects was identified in the active region of some devices using channeling contrast microscopy. The channeling spectra that were extracted from these defective regions have shown a higher value of χmin=24% (the ratio of backscattered particle yield with the crystal 〈100〉 axis aligned with the beam to the yield for a random alignment) than the surrounding crystal χmin=9%–15%. The presence of these linear defects was linked to a degradation in the performance of the corresponding devices in an array. MSM detectors fabricated on Hg1−xCdxTe/GaAs/Si were lower in breakdown voltage than equivalent devices on Hg1−xCdxTe/GaAs. This trend corresponded to a higher value of χminfor the Hg1−xCdxTe on GaAs/Si than with the epitaxial layer grown on GaAs.
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