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Process technology for monolithic high‐speed Schottky/resonant tunneling diode logic integrated circuits

 

作者: P.‐M. Lei,   S. Subramaniam,   G. H. Bernstein,   W. Williamson,   B. K. Gilbert,   D. H. Chow,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 6  

页码: 3497-3501

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588787

 

出版商: American Vacuum Society

 

关键词: InAs;AlSb;GaSb

 

数据来源: AIP

 

摘要:

A seven‐layer process was developed to fabricate monolithic high‐speed logic circuits, requiring integration of Schottky diodes and resistors with interband resonant tunneling diodes (RTDs). With this process technology, we have demonstrated a functionally complete logic family based on RTDs with a maximum operating frequency in excess of 12 GHz and a minimum power dissipation on the order of 0.5 mW per gate.

 

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