SimGenstrained monolayer superlattices (SMS) have been fabricated by molecular beam epitaxy (MBE) and characterized using photoluminescence. Symmetrically strained structures with different periodicities have been grown on top of Si1−xGexalloy buffer layers. Luminescence peaks below the Si energy bandgap have been observed. Superlattices on top of Si buffers with different substrate orientations have been prepared with thicknesses below the critical values in order to avoid generation of misfit dilocations. Energy band diagrams constructed based on the deformation potential and the envelope function approximation are used to explain the experimental results.