The electrical behaviour of abrupt ion implanted and diffused P+N junctions
作者:
J. Stephen,
J.A. Grimshaw,
期刊:
Radiation Effects
(Taylor Available online 1971)
卷期:
Volume 7,
issue 1-2
页码: 73-85
ISSN:0033-7579
年代: 1971
DOI:10.1080/00337577108232566
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Results are reported of measurements of the properties of diodes formed by ion implantation, and for comparison boron diffused P+N diodes of similar area close by on the same chip. The four group III acceptor impurities were implanted separately to a dose of 5 × 1015ions/cm2at room temperature into similar samples of suitably masked silicon. Boron ions were also implanted at liquid nitrogen temperature and 450°C. Annealing was limited to a maximum temperatare of 550 °C.
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