首页   按字顺浏览 期刊浏览 卷期浏览 The electrical behaviour of abrupt ion implanted and diffused P+N junctions
The electrical behaviour of abrupt ion implanted and diffused P+N junctions

 

作者: J. Stephen,   J.A. Grimshaw,  

 

期刊: Radiation Effects  (Taylor Available online 1971)
卷期: Volume 7, issue 1-2  

页码: 73-85

 

ISSN:0033-7579

 

年代: 1971

 

DOI:10.1080/00337577108232566

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Results are reported of measurements of the properties of diodes formed by ion implantation, and for comparison boron diffused P+N diodes of similar area close by on the same chip. The four group III acceptor impurities were implanted separately to a dose of 5 × 1015ions/cm2at room temperature into similar samples of suitably masked silicon. Boron ions were also implanted at liquid nitrogen temperature and 450°C. Annealing was limited to a maximum temperatare of 550 °C.

 

点击下载:  PDF (3891KB)



返 回