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Observation of misfit dislocations at the InxGa1−xAs/GaAs interface by ballistic‐electron‐emission microscopy

 

作者: E. Y. Lee,   S. Bhargava,   M. A. Chin,   V. Narayanamurti,   K. J. Pond,   K. Luo,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 7  

页码: 940-942

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.116950

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report ballistic‐electron‐emission microscopy (BEEM) imaging andspatiallyresolvedspectroscopy of InxGa1−xAs/GaAs misfit dislocations 800 A˚belowthe surface. Majority‐carrier scattering by a fraction of misfit dislocations was seen to locally reduce the BEEM current and to give logarithmic spatial dependence, which suggests charging of the dislocation cores. ©1996 American Institute of Physics.

 

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