High performance ZnSTe photovoltaic visible-blind ultraviolet detectors
作者:
I. K. Sou,
C. L. Man,
Z. H. Ma,
Z. Yang,
G. K. L. Wong,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 26
页码: 3847-3849
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120522
出版商: AIP
数据来源: AIP
摘要:
ZnS1−xTex-based Schottky photodiodes have been fabricated on various substrates using the molecular beam epitaxy technique. The photovoltage output of these photovoltaic devices is determined using Fourier transform interferometric spectroscopy. The results show that these devices (withTe<10&percent;) are highly sensitive in the ultraviolet but are visible blind. An external quantum efficiency of over 50&percent; has been achieved on a device grown on a GaP substrate and over 40&percent; on a Si substrate. ©1997 American Institute of Physics.
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