Using image processing algorithms based on nonlinear imaging theory, we have analyzed high‐resolution transmission electron microscopy images of InAs/GaSb superlattices (SLs) grown by molecular beam epitaxy. Our analysis indicates that InSb‐like interfaces have a roughness of 1 monolayer (ML), for a SL grown on a GaSb buffer layer. For GaAs‐like interfaces, however, the interface roughness is found to be 2 MLs when the SL is grown on a GaSb buffer. For SLs grown on an InAs buffer, the roughness of GaAs‐like interfaces (3 MLs) is also greater than that of InSb‐like interfaces (2MLs). These results suggest two general observations. The first is that GaAs‐like interfaces are rougher than InSb‐like interfaces. This difference may be due to the high surface energy of GaAs as compared to InSb. The second observation is that interface roughness is greater for an InAs/GaSb SL grown on an InAs buffer layer than for the same SL grown on a GaSb buffer layer. This difference in interface roughness may be due to InAs SL layers being in tension when grown on a GaSb buffer layer, whereas GaSb SL layers are under compression when grown on an InAs buffer layer. ©1995 American Institute of Physics.