Field Emission in Rutile Diodes
作者:
O. E. Wagner,
W. W. Happ,
期刊:
Journal of Applied Physics
(AIP Available online 1963)
卷期:
Volume 34,
issue 2
页码: 259-260
ISSN:0021-8979
年代: 1963
DOI:10.1063/1.1702594
出版商: AIP
数据来源: AIP
摘要:
Tunnel field emission is here proposed as a model for rectification in rutile diodes. This model has been previously applied by Mead [C. A. Mead, J. Appl. Phys.23, 646 (1961)] to rectification phenomena observed with tantalum and aluminum oxides. In the case of rutile diodes it was found that the forward characteristics were explained by the tunnel field emission mechanism.
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