Infrared spectral distribution of photoconductivity and up‐conversion in GaP light emitting diodes
作者:
K. Moser,
S. Wahl,
W. Eisfeld,
W. Prettl,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 12
页码: 5438-5442
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.334819
出版商: AIP
数据来源: AIP
摘要:
The spectral distribution of photoconductivity and infrared excited electroluminescence has been determined in GaP light emitting diodes at low temperatures by conventional infrared spectroscopic techniques. The observed photoresponse was found to be caused by ionization of shallow donors only, showing a peak sensitivity of 20 mA/W at 13‐&mgr;m wavelength. Spectral structures for photon energies lower than the binding energies of shallow donors are attributed to electric field assisted photoionization. An external quantum efficiency of 3×10−3was obtained being largely independent on the bias voltage and the wavelength of infrared stimulation.
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