(Eu,Y)3(Fe,Ga)5012garnets have desirable magnetic properties for bubble domain applications and can be grown as epitaxial thin films on simple Gd3Ga5012substrate crystals. These films have the general formula EuRY3−RFe5−xGax012and are in the composition range of the prototype Eu.5Y2.5Fe4Ga012. Room temperature magnetization can be estimated from the expression 4&pgr;M = 1170 − 120.R − 790.x. Uniaxial anisotropy in these films results from biaxial compressive stress induced by a lattice mismatch with the GGG substrates (ao= 12.384 A˚) . Lattice parameters for films grown from Pb0‐B203fluxed melts by the LPE method are ao= 12.376 + 0.041·R − 0.015·x + 0.013·p, where p = wt.% Pb incorporated into the films. The effects of growth parameters on Ga content and Pb incorporation in these films are discussed. The Ga‐ and Pb‐contents of films are critical factors in determining magnetization and anisotropy, respectively.