The binding energies of hydrogenic donor in both finite and infinite GaAs‐(Ga,Al)As spherical quantum dots are calculated as a function of the donor position for different radii within the effective‐mass approximation. It is observed an enhancement of the binding energy of donors in quantum dots when compared to results in quantum wells and quantum‐well wires, which is an expected consequence of the higher geometrical electronic confinement in these systems. The density of impurity states as a function of the donor binding energy was also calculated. As a general feature it presents structures associated with special impurity positions that may be important in the understanding of the absorption and photoluminescence experiments of doped quantum dots.