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Intensity‐dependent cyclotron resonance in a GaAs/GaAlAs two‐dimensional electron gas

 

作者: G. A. Rodri´guez,   R. M. Hart,   A. J. Sievers,   F. Keilmann,   Z. Schlesinger,   S. L. Wright,   W. I. Wang,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 49, issue 8  

页码: 458-460

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97115

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Cyclotron resonance of a two‐dimensional electron gas at a GaAs/GaAlAs interface is measured in the far infrared at intensities of up to 10 kW/cm2. Both the cyclotron mass and the carrier density are independent of intensity but the relaxation time changes with a dependence which is similar to that observed earlier in high dc field mobility studies.

 

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