Simulation of amorphization in silicon lattice
作者:
Yu.N. Knyzhnikov,
期刊:
Radiation Effects
(Taylor Available online 1975)
卷期:
Volume 25,
issue 1
页码: 41-44
ISSN:0033-7579
年代: 1975
DOI:10.1080/00337577508242052
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The process of disordering of structure of silicon crystallite being initially diamond-like was studied with the method of computer simulation under the action of the thermal excitation, which can be developed at the radiation damage as well. The central potential of interatomic interaction extended to two coordination spheres was used. Simulation results are compared with experimental results of the study of structure of silicon amorphous films with the electron diffraction method.
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