A technology of proximity x‐ray lithography has been developed to replicate patterns of sub‐100‐nm feature size using synchrotron radiation. Process modeling has been done in advance in order to optimize the mask absorber thickness. It is shown that with tungsten absorber, a 0.3 μm thickness is the most desirable for 50 nm linewidth processing. Masks compatible with a Karl Suss stepper have been fabricated using 50 keV electron‐beam lithography and reactive ion etching techniques. As a result, well‐defined 50‐nm‐wide isolated W lines and small gratings of period down to 100 nm have been fabricated. Then they have been replicated under proximity condition using Super ACO synchrotron radiation. We present details of a replication procedure with gap settings down to 5 μm and show how sub‐100 nm structures can be 1:1 printed into both poly (methylmethacrylate) (PMMA) and (8.5%) MAA/PMMA resists. Finally, the results are analyzed in terms of a scaling rule to evaluate the resolution limit as a function of proximity gap using a synchrotron source.