Al/TiW reaction kinetics: Influence of Cu and interface oxides
作者:
J. O. Olowolafe,
C. J. Palmstro&slash;m,
E. G. Colgan,
J. W. Mayer,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 9
页码: 3440-3443
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335764
出版商: AIP
数据来源: AIP
摘要:
The reaction kinetics of Al with Ti22W78alloys has been investigated under vacuum annealing conditions. In particular, the effects of Cu in Al and venting during deposition of TiW were studied. It was observed that Cu did not play any significant role in the kinetics of the interdiffusion of Al and TiW. During the reaction process at temperatures around 500 °C, Ti accumulated on the surface of the samples with or without Cu in Al. The Ti accumulation is diffusion limited with an activation energy of 2.4 eV. Interface oxides are believed to be primarily responsible for the stability of Al/TiW metallization.
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