首页   按字顺浏览 期刊浏览 卷期浏览 High‐performance thin‐film transistors from optimized polycrystalline sil...
High‐performance thin‐film transistors from optimized polycrystalline silicon films

 

作者: D. B. Meakin,   P. A. Coxon,   P. Migliorato,   J. Stoemenos,   N. A. Economou,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 26  

页码: 1894-1896

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97678

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The performance of thin‐film transistors fabricated in unrecrystallized (small‐grain) polcrystalline silicon is shown to be greatly improved by depositing the films at much lower pressures than normally used in the low‐pressure chemical vapor deposition process. Electronic measurements on completed devices are presented and related to the film structure by transmission electron microscopy examination.

 

点击下载:  PDF (348KB)



返 回