Gallium arsenide films and solar cells on graphite substrates
作者:
Shirley S. Chu,
T. L. Chu,
M. S. Lan,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 9
页码: 5805-5809
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.326723
出版商: AIP
数据来源: AIP
摘要:
Gallium arsenide films have been deposited on graphite substrates by the reaction of gallium, hydrogen chloride, and arsine in a hydrogen flow. The structural and electrical properties of gallium arsenide films have been investigated. The interface between undoped gallium arsenide and graphite exhibits rectifying characteristics; however, a heavily doped interlayer reduces the interface resistance to a tolerable level. MOS‐type solar cells prepared fromn‐GaAs/n+‐GaAs/graphite structures have AM1 efficiencies of higher than 6%.
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