We present a comparative study of two-dimensional electron gas structures, which were grown on(511)AGaAs substrates and on conventional (100) GaAs substrates. The study included both normal interface and inverted interface structures. The(511)Apresents consistently and substantially improved transport properties, whose origin can be traced to the growth dynamics of these surfaces. We conclude that(511)AGaAs promises to serve as an alternative and superior platform for realizing variousn-type GaAs structures. ©1998 American Institute of Physics.