Nearly ideal electronic properties of sulfide coated GaAs surfaces
作者:
E. Yablonovitch,
C. J. Sandroff,
R. Bhat,
T. Gmitter,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 6
页码: 439-441
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98415
出版商: AIP
数据来源: AIP
摘要:
We have discovered that a class of inorganic sulfides [Li2S, (NH4)2S, Na2S⋅9H2O, etc.] imparts excellent electronic properties to GaAs surfaces. The surface recombination velocity at the interface between Na2S⋅9H2O and GaAs begins to approach that of the nearly ideal AlGaAs/GaAs interface. We propose the formation of a robust covalently bonded sulfide layer to explain the favorable electronic quality of such interfaces.
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