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Raman studies of crystal perfection in mercury cadmium telluride wafers

 

作者: Ian Hill,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 9  

页码: 4270-4275

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.344941

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Resonant second‐order Raman scattering of zone‐center longitudinal‐optical phonons [2LO(&Ggr;)] in Hg0.8Cd0.2Te and Hg0.7Cd0.3Te is reported. Three 2LO(&Ggr;) components are seen, which are assigned as LO1+LO1,LO1+LO2and LO2+LO2combinations (where 1 denotes CdTe‐like and 2 denotes HgTe‐like). The intensity of these bands is very sensitive to crystal damage, making this a very useful probe of near‐surface crystal order. The detection of Te inclusions by Raman microscopy is reported and a variation in peak position is attributed to different inclusions being under varying tensile strain. Bromine‐methanol etching of Hg1−xCdxTe is shown to lead to a buildup of Te on the surface, while an increase in intensity of the 2LO(&Ggr;) modes of the Hg1−xCdxTe reflects removal of surface damage.

 

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