Morphology of Si(100) surfaces exposed to a remote H plasma
作者:
J. S. Montgomery,
T. P. Schneider,
R. J. Carter,
J. P. Barnak,
Y. L. Chen,
J. R. Hauser,
R. J. Nemanich,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 15
页码: 2194-2196
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115100
出版商: AIP
数据来源: AIP
摘要:
This study addresses the formation of roughness and near surface defects on Si(100) surfaces that are exposed to a remotely excited H plasma. The remote H plasma processing can be employed forinsituwafer cleaning. Atomic force microscopy, transmission electron microscopy, and residual gas analysis are used to measure the surface roughness, the near surface defects, and the etching, respectively. For remote H plasma exposures at substrate temperatures ≤300 °C, etching is observed along with a significant increase in the surface roughness and the formation of platelet defects in the near surface region. As the substrate temperature is increased to above 450 °C, etching is significantly reduced and no subsurface defects or increases in surface roughness are observed. ©1995 American Institute of Physics.
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