The properties of recombination centers in germanium are obtained on the basis of lifetime data in conjunction with other information available. For recombination centers introduced by Co60gamma rays and fission neutrons, the recombination energy level position is placed at 0.20 ev below the conduction band. The room temperature hole‐capture cross sections resulting are 1.1×10−15cm2and 6×10−15cm2for Co60gammaray and fission neutron irradiation, respectively. For the case of 14‐Mev neutron irradiation the energy level is located 0.32 ev above the valence band. The room temperature hole and electron cross sections are ∼6 ×10−15cm2and 2.2×10−17cm2, respectively. The capture probabilities are assumed to be independent of temperature except for the case of gamma irradiation, for which there is apparently a fairly strong variation corresponding to a change in the activation energy of 0.07 ev. The selection of the values given above is not entirely unique. The assumptions made in their determination are discussed. The values given are directly applicable only in the case ofn‐type material, the situation inp‐type material being more complex.