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Characterization of anodic barrier films on tantalum and 1100 aluminum by ISS/SIMS

 

作者: R. C. McCune,  

 

期刊: Journal of Vacuum Science and Technology  (AIP Available online 1978)
卷期: Volume 15, issue 1  

页码: 31-34

 

ISSN:0022-5355

 

年代: 1978

 

DOI:10.1116/1.569432

 

出版商: American Vacuum Society

 

关键词: TANTALUM;ALUMINIUM;SPUTTERING;ION SCATTERING ANALYSIS;FILMS;MASS SPECTROSCOPY;HELIUM IONS;NEON IONS;TANTALUM OXIDES;ALUMINIUM OXIDES;OVERVOLTAGE;DEPTH DOSE DISTRIBUTIONS;ANODIZATION;MASS SPECTROSCOPY

 

数据来源: AIP

 

摘要:

Ion scattering spectrometry (ISS) and concurrent secondary ion mass spectrometry (SIMS) were used to determine the depth profiles of anodic barrier oxide films grown on tantalum and type 1100 aluminum. The sputter rate in each case was determined from the film thickness measured by the anodic overvoltage, and the penetration time determined by the decrease in intensity of the metal oxide fragment observed using SIMS. A mixture of helium and neon ions was used to sputter aluminum oxide films in order to observe ion scattering of helium by oxygen, while taking advantage of the higher sputtering rate available with neon. A comparison of sputter rates for helium and neon on tantalum oxide indicated that neon sputtered the film at a rate eight times that of helium. SIMS depth profiling of the residual boron in the anodic aluminum oxide indicated a mixing effect which did not permit adequate resolution of the interface between the oxide film and the underlying metal.

 

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