Superconductor film growth on LaGaO3substrates by liquid phase epitaxy
作者:
R. F. Belt,
J. Ings,
G. Diercks,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 18
页码: 1805-1807
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103222
出版商: AIP
数据来源: AIP
摘要:
Growth conditions and solubility relations were investigated for controlled crystallization of YBa2Cu3O7−xand Bi2Sr2CaCu2O8+xfilms from KCl solutions. Applications were made to film growth by liquid phase epitaxy using the dipping process. Epipolished substrates of LaGaO3with (001) orientations were employed. The micrometer thick films were identified by x ray to be of the correct phases. Furthermore, the polycrystalline films showed a highly preferred orientation with (001) of the films parallel to (001) of LaGaO3. The Bi2Sr2CaCu2O8film composition was superconducting as‐grown with a zero resistanceTcof 78 K and a &Dgr;Tcof 7 K, while the YBa2Cu3O7−xfilms required an oxidation for optimum properties.
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