The dislocation structure of type 6Hhexagonal silicon carbide has been studied by etching combined with optical microscopy and by x‐ray diffraction microscopy. The validity of the conventional etching technique for identification of the sites of the intersection of dislocations with (0001) surfaces has been established. However, high densities of dislocations lying in (0001) planes and hence heretofore undetected by etching techniques were often observed by diffraction microscopy. Dislocations with [112¯0] vectors have now been found with evidence for slip both on basal planes and on a ``puckered'' pyramidal plane. Pileups formed by slip and dislocation walls formed by climb were also observed. Silicon carbide shows many of the characteristics of more conventional plastically deformable materials.