We demonstrate the operation of InSbBi infrared photoconductive detectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The fabricated photodetector showed a cutoff wavelength of 7.7 &mgr;m at 77 K. The responsivity of the InSbBi photodetector at 7 &mgr;m was about 3.2 V/W at 77 K. The corresponding Johnson-noise limited detectivity was4.7×108 cm Hz1/2/W.The carrier lifetime was estimated to be about 86 ns from the voltage-dependent responsivity measurements. ©1997 American Institute of Physics.