An x-ray photoelectron spectroscopy investigation of O impurity chemistry in CdS thin films grown by chemical bath deposition
作者:
David W. Niles,
Gregory Herdt,
Mowafak Al-Jassim,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 4
页码: 1978-1984
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364054
出版商: AIP
数据来源: AIP
摘要:
We used x-ray photoelectron spectroscopy to investigate the chemistry of O impurity atoms in CdS thin films grown for photovoltaic purposes by chemical-bath deposition (CBD). We compared the Cd3dphotoline, O1sphotoline, Cd MNN Auger line, and O KLL Auger line taken from a CBD CdS thin film, CdS single-crystal reference, Cd metal reference, CdO reference, and Cd(OH)2reference. This comparison showed that the O present in thin-film CBD CdS is a manifestation of H2O incorporated into the film during the CBD growth. Ar+ion sputtering, a technique frequently used in thin-film analyses, preferentially removed S from the CBD CdS thin film and created CdS1−xOx(x∼0.04) in the surface region from the incorporated O impurity. ©1997 American Institute of Physics.
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