A new method for developing a realistic model of any type of solar cell, with application to Thermophotovoltaic devices, is presented in this paper. Taking into account the high cost of research and experimentation involved with the development of advanced cells, we present here this novel methodology. An example model of an InGaP/GaAs/Ge multi‐junction cell is prepared and is fully simulated. The major stages of the process will be explained and the simulation results are compared to published experimental data. An example of cell parameters optimization is also presented. The flexibility of the proposed methodology is demonstrated and example results are shown throughout the whole process. © 2003 American Institute of Physics