A novel Si‐sample cleaning method is described. This low‐temperature process uses ultraviolet (UV) radiation and an ozone beam to remove carbonaceous components from the native oxide ofas‐receivedSi samples. Because the cleaning process is implemented as an ultrahigh vacuum (UHV) process in a UHV process chamber, the sample does not need to be reexposed to atmospheric conditions between the carbon removal and the desorption of the native oxide, which results in very low contamination levels. The efficiency of this carbon removal‐method is determined.