Sub‐&mgr;m, planarized, Nb‐AlOx‐Nb Josephson process for 125 mm wafers developed in partnership with Si technology
作者:
M. B. Ketchen,
D. Pearson,
A. W. Kleinsasser,
C.‐K. Hu,
M. Smyth,
J. Logan,
K. Stawiasz,
E. Baran,
M. Jaso,
T. Ross,
K. Petrillo,
M. Manny,
S. Basavaiah,
S. Brodsky,
S. B. Kaplan,
W. J. Gallagher,
M. Bhushan,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 20
页码: 2609-2611
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106405
出版商: AIP
数据来源: AIP
摘要:
We have demonstrated a new planarized all‐refractory technology for lowTcsuperconductivity (PARTS). With the exception of the Nb‐AlOx‐Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state‐of‐the‐art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical‐mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5–100 &mgr;m2. Junction quality is excellent with the figure of meritVmtypically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.
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