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Sub‐&mgr;m, planarized, Nb‐AlOx‐Nb Josephson process for 125 mm wafers developed in partnership with Si technology

 

作者: M. B. Ketchen,   D. Pearson,   A. W. Kleinsasser,   C.‐K. Hu,   M. Smyth,   J. Logan,   K. Stawiasz,   E. Baran,   M. Jaso,   T. Ross,   K. Petrillo,   M. Manny,   S. Basavaiah,   S. Brodsky,   S. B. Kaplan,   W. J. Gallagher,   M. Bhushan,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 20  

页码: 2609-2611

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106405

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have demonstrated a new planarized all‐refractory technology for lowTcsuperconductivity (PARTS). With the exception of the Nb‐AlOx‐Nb trilayer preparation, the processing is done almost exclusively within an advanced Si technology fabrication facility. This approach has allowed us to leverage highly off of existing state‐of‐the‐art lithography, metal etching, materials deposition, and planarization capabilities. Using chemical‐mechanical polish as the planarization technique we have fabricated Josephson junctions ranging in size from 0.5–100 &mgr;m2. Junction quality is excellent with the figure of meritVmtypically exceeding 70 mV. PARTS has yielded fully functional integrated Josephson devices including magnetometers, gradiometers, and soliton oscillators.

 

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