The epitaxial regrowth of argon‐implanted self‐implantation‐produced amorphous silicon underQ‐switched ruby laser pulses is reported. It is shown that pulse annealing succeeds in producing epitaxial regrowth in the present case where equilibrium thermal annealing fails. A highly porous layer filled with spherical voids is observed by transmission electron microscopy (TEM). Four‐point probe measurements of the annealed layers exhibit a very high sheet resistance. The electrical properties are explained in terms of the unique microstructure of the pulse annealed layer.