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Addendum: Deep emission band at GaInP/GaAs interface

 

作者: S. H. Kwok,   P. Y. Yu,   K. Uchida,   T. Arai,  

 

期刊: Journal of Applied Physics  （AIP Available online 1997）
卷期: Volume 82, issue 7  

页码: 3630-3632

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.365686

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well. ©1997 American Institute of Physics.

 

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