Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon
作者:
D. H. Lowndes,
G. E. Jellison,
S. J. Pennycook,
S. P. Withrow,
D. N. Mashburn,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 20
页码: 1389-1391
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96918
出版商: AIP
数据来源: AIP
摘要:
Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser‐induced ‘‘explosively’’ propagating buried molten layers in ion implantation‐amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling‐velocity relationship of ∼14 K/(m/s).Z‐contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm.
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