Single‐ and multiple‐energy Fe, Cr, and V ions were implanted into InGaAs. Annealing of the implanted InGaAs samples caused a redistribution of the implanted atoms, as determined by secondary ion mass spectrometry. Coimplantation of Fe with P did not prevent this redistribution. A transport equation calculation of Fe‐implantation‐induced stoichiometric disturbances in InGaAs was done. The lattice quality of implanted InGaAs was investigated by photoreflectance measurements. Fe‐implanted InGaAs has a resistivity close to the intrinsic limit, whereas Cr‐ and V‐implanted InGaAs have a lower resistivity than the unimplanted material.