Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers
作者:
K. Y. Lau,
S. Xin,
W. I. Wang,
N. Bar‐Chaim,
M. Mittelstein,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 12
页码: 1173-1175
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101688
出版商: AIP
数据来源: AIP
摘要:
It is shown that the unique properties of strained‐layer quantum well lasers can be identified by measuring the relaxation oscillation frequency as a function of optical gain. These measurements are insensitive to effects due to nonradiative recombinations and leakage currents, which can mask the beneficial effects in terms of a lower threshold current due to a reduced hole mass in strained quantum wells. The conclusion, both theoretically and experimentally, is that strained‐layer quantum well lasers have a higher differential gain but saturate at a lower gain level as compared to regular quantum well lasers. As a consequence, for a strained single quantum well, slightly higher relaxation oscillation frequency results, but only for certain limited ranges of device parameters. A multiple strained‐layer quantum well can in theory take better advantage of the higher differential gain.
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