Low‐coverage metal‐induced unrelaxation of the semiconductor surface at Ag/InP(110) interfaces: A photoemission extended x‐ray absorption fine structure study
作者:
P. S. Mangat,
K. M. Choudhary,
D. Kilday,
G. Margaritondo,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 4
页码: 995-1000
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584955
出版商: American Vacuum Society
关键词: SILVER;INDIUM PHOSPHIDES;INTERFACES;PHOTOELECTRON SPECTROSCOPY;EXAFS;SURFACE STRUCTURE;BOND LENGTHS;FOURIER ANALYSIS;RELAXATION;INTERFACE STRUCTURE;Ag;InP
数据来源: AIP
摘要:
The atomic geometries of Ag/InP(110) interfaces for 0.5 and 1 Å nominal metal coverages have been determined by photoemission extended x‐ray absorption fine structure (PEXAFS). The coverages correspond to 3×1014and 6×1014atoms/cm2, if we assume that the Ag atoms are metallic, although we know that the Ag atoms are clustered at these low coverages. P 2pPEXAFS for 0.5 and 1 Å Ag covered InP(110) surfaces were acquired. The data were analyzed by conventional Fourier analysis procedures using the theoretical backscattering phase function of McKaleetal. plus absorber phase function of Teo and Lee. For both silver coverages, the P–In bond length at the interface was determined as 2.52±0.04 Å, which is 0.08±0.02 Å greater than its value for the clean surface. For the clean InP(110) surface, the average (first) P–In bond length is 2.43±0.04 Å [Choudharyetal., Phys. Rev. B38, 1566 (1988)], whereas in bulk InP the P–In interatomic distance is 2.54 Å. Hence, the PEXAFS results for low‐coverage Ag/InP(110) interfaces indicate that the relaxation (contraction) of the clean InP(110) surface is mostly removed by the deposited noble metal atoms. The structural results show that the low‐coverage Ag/InP(110) interfaces are nonreactive, since the unrelaxation is not a significant reaction. The low‐coverage metal‐induced unrelaxation in the P–In bond length at Ag/InP(110) interfaces might contribute to Fermi‐level shifts during the Schottky barrier formation.
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